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| Transistor 2SC829 Silicon NPN epitaxial planer type For high-frequency amplification Unit: mm 5.00.2 4.00.2 s Features q Optimum for RF amplification, oscillation, mixing, and IF stage of FM/AM radios. s Absolute Maximum Ratings Parameter Collector to base voltage Collector to emitter voltage Emitter to base voltage Collector current Collector power dissipation Junction temperature Storage temperature Symbol VCBO VCEO VEBO IC PC Tj Tstg (Ta=25C) Ratings 30 20 5 30 400 150 -55 ~ +150 Unit V V V mA mW C C 13.50.5 5.10.2 0.45 -0.1 1.27 +0.2 0.45 -0.1 1.27 +0.2 123 2.30.2 2.540.15 1:Emitter 2:Collector 3:Base JEDEC:TO-92 EIAJ:SC-43A s Electrical Characteristics Parameter Collector to base voltage Collector to emitter voltage Emitter to base voltage Forward current transfer ratio Transition frequency Common emitter reverse transfer capacitance Reverse transfer impedance (Ta=25C) Symbol VCBO VCEO VEBO hFE* fT Cre Zrb Conditions IC = 10A, IE = 0 IC = 2mA, IB = 0 IE = 10A, IC = 0 VCE = 10V, IC = 1mA VCB = 10V, IC = 1mA, f = 200MHz VCE = 10V, IC = 1mA, f = 10.7MHz VCB = 10V, IE = -1mA, f = 2MHz min 30 20 5 70 150 230 1.3 1.6 60 250 MHz pF typ max Unit V V V *h FE Rank classification B 70 ~ 160 C 110 ~ 250 hFE Rank 1 Transistor PC -- Ta 500 12 Ta=25C 450 10 IB=100A 80A 8 60A 6 40A 50 2SC829 IC -- VCE 60 VCE=10V IC -- VBE Collector power dissipation PC (mW) Collector current IC (mA) 350 300 250 200 150 100 50 0 0 20 40 60 80 100 120 140 160 Collector current IC (mA) 400 40 25C 30 Ta=75C 20 -25C 4 2 20A 10 0 0 6 12 18 0 0 0.4 0.8 1.2 1.6 2.0 Ambient temperature Ta (C) Collector to emitter voltage VCE (V) Base to emitter voltage VBE (V) IB -- VBE Collector to emitter saturation voltage VCE(sat) (V) 120 VCE=10V Ta=25C 100 100 30 10 3 1 0.3 VCE(sat) -- IC IB/IB=10 300 hFE -- IC VCE=10V Forward current transfer ratio hFE 250 Ta=75C 200 25C 150 -25C 100 Base current IB (A) 80 60 40 25C 0.1 Ta=75C 20 -25C 0.03 0.01 0.1 50 0 0 0.6 1.2 1.8 0.3 1 3 10 30 100 0 0.1 0.3 1 3 10 30 100 Base to emitter voltage VBE (V) Collector current IC (mA) Collector current IC (mA) fT -- IE 600 Ta=25C 80 Zrb -- IE Common emitter reverse transfer capacitance Cre (pF) 2.4 Cre -- VCE f=2MHz Ta=25C IC=1mA f=10.7MHz Ta=25C Reverse transfer impedance Zrb () Transition frequency fT (MHz) 70 60 50 40 30 20 10 0 - 0.1 VCB=6V 10V 500 2.0 400 VCB=10V 6V 200 1.6 300 1.2 0.8 100 0.4 0 - 0.1 - 0.3 -1 -3 -10 -30 -100 - 0.3 -1 -3 -10 0 0.1 0.3 1 3 10 30 100 Emitter current IE (mA) Emitter current IE (mA) Collector to emitter voltage VCE (V) 2 Transistor Cob -- VCB 1.6 12 yie=gie+jbie VCE=10V 2SC829 bie -- gie 0 bre -- gre Reverse transfer susceptance bre (mS) yre=gre+jbre VCE=10V f=0.45MHz 10.7 25 Collector output capacitance Cob (pF) 1.4 1.2 1.0 0.8 0.6 0.4 0.2 0 1 3 10 IE=-1mA f=1MHz Ta=25C Input susceptance bie (mS) 10 100 - 0.5 8 58 -1.0 - 0.4mA -1mA -1.5 -2mA -4mA 58 6 25 10.7 IE=- 0.4mA -1mA -2mA -4mA -7mA f=0.45MHz 4 -2.0 2 -2.5 100 IE=-7mA 0 30 100 0 4 8 12 16 20 -3.0 - 0.5 - 0.4 - 0.3 - 0.2 - 0.1 0 Collector to base voltage VCB (V) Input conductance gie (mS) Reverse transfer conductance gre (mS) bfe -- gfe 0 boe -- goe 0.45 Forward transfer susceptance bfe (mS) - 0.1mA -0.4mA 25 100 100 58 0.45 10.7 -1mA 1.2 100 10.7 -20 Output susceptance boe (mS) -2mA 25 58 1.0 -4mA 100 -40 100 58 25 f=10.7MHz 0.8 58 0.6 25 0.4 10.7 0.2 f=0.45MHz 0 0.2 0.4 -7mA -4mA -2mA -1mA - 0.4mA IE=- 0.1mA -60 58 IE=-7mA -80 -100 yfe=gfe+jbfe VCE=10V yoe=goe+jboe VCE=10V 0.6 0.8 1.0 -120 0 20 40 60 80 100 0 Forward transfer conductance gfe (mS) Output conductance goe (mS) 3 |
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